march 2006 FDD8796/fdu8796 n-channel powertrench ? mosfet ?2006 fairchild semiconductor corporation FDD8796/fdu8796 rev. b www.fairchildsemi.com 1 FDD8796/fdu8796 n-channel powertrench ? mosfet 25v, 35a, 5.7m ? general description this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. application ? vcore dc-dc for desktop computers and servers ? vrm for intermediate bus architecture features ? max r ds(on) = 5.7m ? at v gs = 10v, i d = 35a ? max r ds(on) = 8.0m ? at v gs = 4.5v, i d = 35a ? low gate charge: q g(10) = 37nc(typ), v gs = 10v ? low gate resistance ? avalanche rated and 100% tested ? rohs compliant d g s short lead i-pak i-pak (to-251aa) g ds g d s mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 25 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) 35 a -continuous (die limited) 98 -pulsed (note 1) 305 e as single pulse avalanche energy (note 2) 91 mj p d power dissipation 88 w t j , t stg operating and storage temperature -55 to 175 c r jc thermal resistance, junction to case to_252, to_251 1.7 c/w r ja thermal resistance, junction to ambient to_252, to_251 100 c/w r ja thermal resistance, junction to ambient to-252,1in 2 copper pad area 52 c/w device marking device package reel size tape width quantity FDD8796 FDD8796 to-252aa 13?? 12mm 2500 units fdu8796 fdu8796 to-251aa n/a (tube) n/a 75 units fdu8796 fdu8796_f071 to-251aa n/a (tube) n/a 75 units l e a d f r e e m t a e l n t i o m p e n i
FDD8796/fdu8796 n-channel powertrench ? mosfet FDD8796/fdu8796 rev. b 2 www.fairchildsemi.com electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain to source breakdown voltage i d = 250 p a, v gs = 0v 25 v ' b vdss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 7 mv/ c i dss zero gate voltage drain current v ds = 20v v gs = 0v t j = 150c 1 p a 250 i gss gate to source leakage current v gs = 20v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 1.2 1.8 2.5 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -6.7 mv/ c r ds(on) drain to source on resistance v gs = 10v, i d = 35a 4.5 5.7 m : v gs = 4.5v, i d = 35a 6.0 8.0 v ds = 10v, i d = 35a t j = 175 c 6.9 9.5 dynamic characteristics c iss input capacitance v ds = 13v, v gs = 0v, f = 1mhz 1960 2610 pf c oss output capacitance 455 605 pf c rss reverse transfer capacitance 315 475 pf r g gate resistance f = 1mhz 1.1 : switching characteristics t d(on) turn-on delay time v dd =13v, i d = 35a v gs = 10v, r gs = 20 : 10 20 ns t r rise time 24 39 ns t d(off) turn-off delay time 99 158 ns t f fall time 57 91 ns q g total gate charge v gs = 0 to10v v dd =13v, i d = 35a, i g = 1.0ma 37 52 nc q g total gate charge v gs = 0 to 5v 19 27 nc q gs gate to source gate charge 6 nc q gd gate to drain charge 6 nc drain-source diode characteristics v sd source to drain diode voltage v gs = 0v, i s = 35a 0.9 1.25 v v gs = 0v, i s = 15a 0.8 1.0 v t rr reverse recovery time i f = 35a, di/dt = 100a/ p s 30 45 ns q rr reverse recovery charge i f = 35a, di/dt = 100a/ p s 23 35 nc notes: 1: pulse time < 300 p s, duty cycle = 2%. 2: starting t j = 25 c, l = 0.3mh, i as = 24.7a, v dd = 23v, v gs = 10v.
FDD8796/fdu8796 n-channel powertrench ? mosfet FDD8796/fdu8796 rev. b 3 www.fairchildsemi.com typical characteristics t j = 25c unless otherwise noted figure 1. on region characteristics 01234 0 10 20 30 40 50 60 70 v gs = 3.5v pulse duration = 80 p s duty cycle = 0.5%max v gs = 3v v gs = 4.5v v gs = 10v i d , drain current (a) v ds , drain to source voltage (v) figure 2. normalized 0 10203040506070 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 3v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 10v v gs = 4.5v v gs = 3.5v on-resistance vs drain current and gate voltage figure 3. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t j , junction temperature ( o c ) normalized drain to source on-resistance i d = 35a v gs = 10v normalized on resistance vs junction temperature figure 4. 246810 2 4 6 8 10 12 14 pulse duration = 80 p s duty cycle = 0.5%max t j = 175 o c t j = 25 o c i d =35a r ds(on) , on-resistance ( m : ) v gs , gate to source voltage (v) on-resistance vs gate to source voltage figure 5. transfer characteristics 01234 0 10 20 30 40 50 60 70 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 175 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.3 0.6 0.9 1.2 1e-3 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 175 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) source to drain diode forward voltage vs source current
FDD8796/fdu8796 n-channel powertrench ? mosfet FDD8796/fdu8796 rev. b 4 www.fairchildsemi.com figure 7. 010203040 0 2 4 6 8 10 v dd = 16v v dd = 10v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 13v gate charge characteristics figure 8. 0.1 1 10 100 1000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 4000 30 capacitance vs drain to source voltage figure 9. unclamped inductive switching capability 0.01 0.1 1 10 100 1 10 t j = 125 o c t j = 25 o c t j = 150 o c i as , avalanche current(a) t av , time in avalanche(ms) 50 300 figure 10. 25 50 75 100 125 150 175 0 20 40 60 80 100 r t jc = 1.7 o c/w i d , drain current (a) t c , case temperature ( o c ) v gs = 10v v gs = 4.5v maximum continuous drain current vs case temperature figure 11. 110 0.1 1 10 100 1000 limited by package 1ms 100us 10ms 10us dc i d , drain current (a) v ds , drain to source voltage (v) single pulse t j = max rated t c = 25 o c operation in this area may be limited by r ds(on) 40 forward bias safe operating area figure 12. single pulse maximum power dissipation 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 1000 10000 single pulse v gs = 10v p ( pk ) , peak transient power (w) t, pulse width (s) 50 t c = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 175 t c ? 150 ----------------------- typical characteristics t j = 25c unless otherwise noted
FDD8796/fdu8796 n-channel powertrench ? mosfet FDD8796/fdu8796 rev. b 5 www.fairchildsemi.com figure 13. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 duty cycle-desen ding order normalized thermal impedance, z t jc t, rectangular pulse duration(s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c transient thermal response curve typical characteristics t j = 25c unless otherwise noted
FDD8796/fdu8796 rev. b www.fairchildsemi.com 6 FDD8796/fdu8796 n-ch annel powertrench ? mosfet rev. i18 trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to m ake changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or u se of any product or circuit described herein; neither does it convey any license under it s patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for u se as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sys tems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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